Raman A Field-Effect Transistors Technology VLSI Design 2026 | 44.09 MB

Title: Field-Effect Transistors Technology: From Sustainability to Next-Generation VLSI Design
Author: Ashish Raman

Description:
The text provides a comprehensive exploration of the transitions occurring in the field-effect transistor technology, covering the historical evolution, current advancements, and future trends.
Features

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• Highlights the significance of field-effect transistors in VLSI and post-complementary metal-oxide-semiconductor design strategies.
  
• Discusses design challenges, different modeling aspects of field-effect transistors, and emerging materials in semiconductor design.
  
• Showcases the importance of simulation in forecasting device behavior, enhancing performance, and investigating novel device designs.
  
• Covers topics such as quantum computing, device simulation process on technology computer-aided design, carbon nanotubes, and organic field-effect transistors.
  

The text is primarily written for senior undergraduates, graduate students, and academic researchers in the fields of electrical engineering, electrical and communications engineering, materials science, nanoscience, and nanotechnology.

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